BYW96DZ [BL Galaxy Electrical]

FAST RECOVERY RECTIFIERS; 快恢复二极管
BYW96DZ
型号: BYW96DZ
厂家: BL Galaxy Electrical    BL Galaxy Electrical
描述:

FAST RECOVERY RECTIFIERS
快恢复二极管

二极管 快恢复二极管 快速恢复二极管
文件: 总2页 (文件大小:59K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
GALAXY ELECTRICAL  
BYW96D(Z)---BYW96E(Z)  
BL  
VOLTAGE RANGE: 800 --- 1000 V  
CURRENT: 3.0 A  
FAST RECOVERY RECTIFIERS  
FEATURES  
Low cost  
DO - 27  
Diffused junction  
Low leakage  
Low forward voltage drop  
High current capability  
Easily cleaned with Freon Alcohol,Isopropanol and  
similar solvents  
MECHANICAL DATA  
Case: JEDEC DO--27,molded plastic  
Terminals: Axial lead ,solderable per  
MIL- STD-202,Method 208  
Polarity: Color band denotes cathode  
Weight: 0.041ounces, 1.15 grams  
Mounting position: Any  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 ambient temperature unless otherwise specified.  
Single phase,half wave,50Hz,resistive or inductive load. For capacitive load,derate by 20%.  
BYW96D  
BYW96E  
UNITS  
Maximum recurrent peak reverse voltage  
Maximum RMS voltage  
1000  
700  
V
V
V
VRRM  
VRMS  
VDC  
800  
560  
800  
Maximum DC blocking voltage  
1000  
Maximum average forw ard rectified current  
3.0  
A
IF(AV)  
9.5mm lead length,  
@TA=75  
Peak forw ard surge current  
10ms single half-sine-w ave  
IFSM  
70.0  
A
superimposed on rated load @TJ=125  
Maximum instantaneous forw ard voltage  
@ 3.0 A  
1.5  
VF  
IR  
V
A
Maximum reverse current  
@TA=25  
10.0  
at rated DC blocking voltage @TA=100  
Maximum reverse recovery time (Note1)  
100.0  
300  
ns  
pF  
/W  
trr  
Typical junction capacitance  
Typical thermal resistance  
(Note2)  
(Note3)  
32  
CJ  
22  
Rθ  
JA  
Operating junction temperature range  
-55-----+150  
-55-----+150  
TJ  
Storage temperature range  
TSTG  
NOTE:1. Measured with IF=0.5A, IR=1A, Irr=0.25A.  
2. Measured at 1.0MHZ and applied rev erse v oltage of 4.0V DC.  
3. Thermal resistance f rom junction to ambient.  
www.galaxycn.com  
Document Number 0261052  
BLGALAXY ELECTRICAL  
1.  
RATINGS AND CHARACTERISTIC CURVES  
BYW96D(Z)---BYW96E(Z)  
FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM  
trr  
50  
10  
N.1.  
N.1.  
+0.5A  
D.U.T.  
(
- )  
0
(+)  
PULSE  
50VDC  
(APPROX)  
(-)  
GENERATOR  
(NOTE2)  
.25A  
OSCILLOSCOPE  
(NOTE 1)  
1
(
+ )  
N.1.  
-1.0A  
1cm  
NOTES:1.RISETIME=7ns MAX. INPUTIMPEDANCE=1M .22pF  
2.RISE TIME=10ns MAX. SOURCE IMPEDANCE=5O  
SET TIMEBASEFOR50/100 ns /cm  
FIG.2 --FORWARD DERATING CURVE  
FIG.3 --PEAK FORWARD SURGE CURRENT  
100  
80  
3.0  
2.4  
TJ=125  
8.3ms Single  
Half  
Sine-Wave  
60  
1.8  
Single Phase  
Half Walf 60Hz  
Resistive or  
40  
20  
0
1.2  
Inductive Load  
0.6  
0
1
2
4
6
10  
20  
4 0 60  
100  
0
25  
50  
75  
100 125  
150 175  
AMBIENT TEMPERATURE,  
NUMBEROF CYCLES AT60 Hz  
FIG.4--TYPICAL FORWARD CHARACTERISTIC  
FIG.5-- TYPICAL JUNCTION CAPACITANCE  
100  
10  
100  
TJ=25  
Pulse Width=300µS  
60  
40  
4
2
1.0  
20  
10  
0.4  
0.2  
0.1  
4
TJ=25  
f=1MHz  
2
0.06  
0.04  
0.02  
0.01  
1
.1  
.2  
.4  
1.0  
2
4
10 20  
40  
100  
0.6 0.8  
1.0 1.2  
1.4  
1.6  
1.8  
2.0  
INSTANTANEOUS FORWARDVOLTAGE,VOLTS  
REVERSE VOLTAGE,VOLTS  
www.galaxycn.com  
2.  
Document Number 0261052  
BLGALAXY ELECTRICAL  

相关型号:

BYW96E

Fast soft-recovery controlled avalanche rectifiers
NXP

BYW96E

FAST RECOVERY RECTIFIERS
BL Galaxy Ele

BYW96E

AVALANCHE FAST SOFT-RECOVERY RECTIFIER DIODES
SYNSEMI

BYW96E

SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE:800 TO 1000V CURRENT: 3.0A
GULFSEMI

BYW96E

SINTERED GLASS JUNCTION FAST AVALANCHE RECTIFIER
LGE

BYW96E

3A plug-in fast recovery diode 1000V DO-201 series
SUNMATE

BYW96E-B

Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon,
FRONTIER

BYW96E-T/B

Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon,
FRONTIER

BYW96E-T/R

Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon,
FRONTIER

BYW96E/20112

DIODE 3 A, 1000 V, SILICON, RECTIFIER DIODE, Rectifier Diode
NXP

BYW96E/20113

DIODE 3 A, 1000 V, SILICON, RECTIFIER DIODE, Rectifier Diode
NXP

BYW96E/20133

DIODE 3 A, 1000 V, SILICON, RECTIFIER DIODE, Rectifier Diode
NXP